Toshiba to Expand 3D Flash Memory Production Capacity by Building New Fabrication Facility at Yokkaichi
Press Releases • Nov 08, 2016 05:37 GMT
Toshiba Corporation today announced the outline schedule for the construction of a state-of-the-art fabrication facility at Yokkaichi Operations in Mie, Japan, for expanded production of BiCS FLASH, its proprietary 3D Flash memory. It will reinforce flash memory development by also constructing Memory R&D center.
Press Releases • Jul 27, 2016 01:53 GMT
Toshiba Corporation today unveiled the latest generation of its BiCS FLASH three-dimensional flash memory with a stacked cell structure, a 64-layer device that will be first in the world to start sample shipments today. The new device incorporates 3-bit-per-cell (TLC) technology and achieves a 256-gigabit capacity, an advance that underscores the potential of Toshiba’s proprietary architecture.
Press Releases • Aug 03, 2015 23:42 GMT
Toshiba Corporation today unveiled the new generation of BiCS FLASH™, a three-dimensional (3D) stacked cell structure flash memory. The new device is the world’s first 256-gigabit (32gigabytes) 48-layer BiCS device and also deploys industry-leading 3-bit-per-cell (triple-level cell, TLC) technology. Sample shipments will start in September.
Press Releases • Mar 26, 2015 02:00 GMT
Toshiba announced development of the world's first 48-layer three dimensional stacked cell structure flash memory called BiCS, a 2-bit-per-cell 128-gigabit (16 gigabytes) device. Sample shipments of products using the new process technology start today.