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Toshiba Develops World's First High-Speed, Low-Power, 1Xnm Size MTJ Element for Non-Volatile STT-MRAM For 2X nm Generation And Later Transistors

News   •   Jun 15, 2016 08:36 GMT

Toshiba Corporation has developed Magnetic Tunnel Junction (MTJ) elements for STT-MRAM non-volatile Magnetoresistive Random Access memory for 2X nm generation and beyond silicon transistors cache memory, required for future high-performance low-power-consumption computing.

Toshiba Launches Interface Bridge ICs that Support Next Generation Content Security Technology, SeeQVault™

Toshiba Launches Interface Bridge ICs that Support Next Generation Content Security Technology, SeeQVault™

News   •   Mar 26, 2014 11:00 GMT

Supports SeeQVault™-Enabled USB Storages

Toshiba Self-encrypting HDD Meets Government-class Security Requirements

Toshiba Self-encrypting HDD Meets Government-class Security Requirements

News   •   Mar 25, 2014 16:00 GMT

Toshiba's self-encrypting HDD is validated to U.S. Federal Information Processing Standard

Toshiba Launches DC Brush Motor Driver ICs for Industrial Equipments Supporting High Current and Voltage

Toshiba Launches DC Brush Motor Driver ICs for Industrial Equipments Supporting High Current and Voltage

News   •   Mar 24, 2014 11:00 GMT

The Industry's First Monolithic ICs Realizing 10A Output Current and 50V Withstand Voltage