Tag / NAND
Toshiba to Expand 3D Flash Memory Production Capacity by Building New Fabrication Facility at Yokkaichi
Press Releases • Nov 08, 2016 05:37 GMT
Toshiba Corporation today announced the outline schedule for the construction of a state-of-the-art fabrication facility at Yokkaichi Operations in Mie, Japan, for expanded production of BiCS FLASH, its proprietary 3D Flash memory. It will reinforce flash memory development by also constructing Memory R&D center.
Blog posts • Aug 04, 2016 03:00 GMT
Yokkaichi Operations, Toshiba's production site for NAND flash memories, is one of the world's largest memory production sites, and one of the most advanced. Even so, Toshiba continues to promote efforts to enhance efficiency and productivity, making full use of AI and Big Data.
Blog posts • Aug 03, 2016 01:50 GMT
Toshiba has long researched technologies essential for continued progress in NAND flash memory. With BiCS FLASH, a new stacked memory cell architecture, the company has created a 3D structure that will support advances and density enhancements in coming years.
Press Releases • Jul 27, 2016 01:53 GMT
Toshiba Corporation today unveiled the latest generation of its BiCS FLASH three-dimensional flash memory with a stacked cell structure, a 64-layer device that will be first in the world to start sample shipments today. The new device incorporates 3-bit-per-cell (TLC) technology and achieves a 256-gigabit capacity, an advance that underscores the potential of Toshiba’s proprietary architecture.
Toshiba and Western Digital Celebrate the Opening of New Fab 2 Semiconductor Fabrication Facility in Yokkaichi, Japan
Press Releases • Jul 15, 2016 03:33 GMT
Yokkaichi, Japan and Irvine, Calif., July 15, 2016 — Toshiba Corporation and Western Digital Corporation today celebrated the opening of the New Fab 2 semiconductor fabrication facility located in Yokkaichi, Mie Prefecture, Japan.
Press Releases • Aug 03, 2015 23:42 GMT
Toshiba Corporation today unveiled the new generation of BiCS FLASH™, a three-dimensional (3D) stacked cell structure flash memory. The new device is the world’s first 256-gigabit (32gigabytes) 48-layer BiCS device and also deploys industry-leading 3-bit-per-cell (triple-level cell, TLC) technology. Sample shipments will start in September.
Press Releases • Mar 26, 2015 02:00 GMT
Toshiba announced development of the world's first 48-layer three dimensional stacked cell structure flash memory called BiCS, a 2-bit-per-cell 128-gigabit (16 gigabytes) device. Sample shipments of products using the new process technology start today.
Toshiba Brings Suit for NAND Flash Memory Patent Infringement in Taiwan -Suit names Taiwan’s Powerchip Technology Corporation and Three Other Companies-
Press Releases • Jun 03, 2014 02:00 GMT
Toshiba has filed a suit in the Intellectual Property Court in Taiwan against Taiwan’s Powerchip Technology Corporation and three companies, Powerflash Technology Corporation, Zentel Electronics Corporation, and C.T.C. Co., Ltd., together, for infringement of Toshiba’s Taiwan patents for NAND flash memory Nos. 154717 and I238412.