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Toshiba to Expand 3D Flash Memory Production Capacity by Building New Fabrication Facility at Yokkaichi

Press Releases   •   Nov 08, 2016 05:37 GMT

Toshiba Corporation today announced the outline schedule for the construction of a state-of-the-art fabrication facility at Yokkaichi Operations in Mie, Japan, for expanded production of BiCS FLASH, its proprietary 3D Flash memory. It will reinforce flash memory development by also constructing Memory R&D center.

No More Muda—Toshiba's Push for Perfection in NAND Flash Memories

No More Muda—Toshiba's Push for Perfection in NAND Flash Memories

Blog posts   •   Aug 04, 2016 03:00 GMT

Yokkaichi Operations, Toshiba's production site for NAND flash memories, is one of the world's largest memory production sites, and one of the most advanced. Even so, Toshiba continues to promote efforts to enhance efficiency and productivity, making full use of AI and Big Data.

Going Up—How Toshiba is taking NAND flash memory into the future

Going Up—How Toshiba is taking NAND flash memory into the future

Blog posts   •   Aug 03, 2016 01:50 GMT

Toshiba has long researched technologies essential for continued progress in NAND flash memory. With BiCS FLASH, a new stacked memory cell architecture, the company has created a 3D structure that will support advances and density enhancements in coming years.

Toshiba Starts World’s First Sample Shipment of 64-Layer 3D Flash Memory

Toshiba Starts World’s First Sample Shipment of 64-Layer 3D Flash Memory

Press Releases   •   Jul 27, 2016 01:53 GMT

Toshiba Corporation today unveiled the latest generation of its BiCS FLASH three-dimensional flash memory with a stacked cell structure, a 64-layer device that will be first in the world to start sample shipments today. The new device incorporates 3-bit-per-cell (TLC) technology and achieves a 256-gigabit capacity, an advance that underscores the potential of Toshiba’s proprietary architecture.

Toshiba and Western Digital Celebrate the Opening of New Fab 2 Semiconductor Fabrication Facility in Yokkaichi, Japan

Toshiba and Western Digital Celebrate the Opening of New Fab 2 Semiconductor Fabrication Facility in Yokkaichi, Japan

Press Releases   •   Jul 15, 2016 03:33 GMT

Yokkaichi, Japan and Irvine, Calif., July 15, 2016 — Toshiba Corporation and Western Digital Corporation today celebrated the opening of the New Fab 2 semiconductor fabrication facility located in Yokkaichi, Mie Prefecture, Japan.

Toshiba Develops World's First 256Gb, 48-layer BiCS FLASH™

Toshiba Develops World's First 256Gb, 48-layer BiCS FLASH™

Press Releases   •   Aug 03, 2015 23:42 GMT

Toshiba Corporation today unveiled the new generation of BiCS FLASH™, a three-dimensional (3D) stacked cell structure flash memory. The new device is the world’s first 256-gigabit (32gigabytes) 48-layer BiCS device and also deploys industry-leading 3-bit-per-cell (triple-level cell, TLC) technology. Sample shipments will start in September.

Toshiba Develops World's First 48-layer BiCS (Three Dimensional Stacked Structure Flash Memory)

Toshiba Develops World's First 48-layer BiCS (Three Dimensional Stacked Structure Flash Memory)

Press Releases   •   Mar 26, 2015 02:00 GMT

Toshiba announced development of the world's first 48-layer three dimensional stacked cell structure flash memory called BiCS, a 2-bit-per-cell 128-gigabit (16 gigabytes) device. Sample shipments of products using the new process technology start today.

Toshiba Brings Suit for NAND Flash Memory  Patent Infringement in Taiwan -Suit names Taiwan’s Powerchip Technology  Corporation and Three Other Companies-

Toshiba Brings Suit for NAND Flash Memory Patent Infringement in Taiwan -Suit names Taiwan’s Powerchip Technology Corporation and Three Other Companies-

Press Releases   •   Jun 03, 2014 02:00 GMT

Toshiba has filed a suit in the Intellectual Property Court in Taiwan against Taiwan’s Powerchip Technology Corporation and three companies, Powerflash Technology Corporation, Zentel Electronics Corporation, and C.T.C. Co., Ltd., together, for infringement of Toshiba’s Taiwan patents for NAND flash memory Nos. 154717 and I238412.